IGBT - IXER35N120D1 NPT IGBT WITH DIODE 1200V 50A vce 2/2V

Brand: GERMANY

Group: Semiconductor

Subgroup: IGBT

Model / Brand: IXYS

Stock: Please Call.

قیمت: 750,000 Tomman

Download PDF file

Keywords: ixer35n120d1

 

 

Detail:

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 2.8V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 50A

Maximum junction temperature (Tj), °C:

Rise time, nS: 50

Maximum collector capacity (Cc), pF:

Package: ISOPLUS247